Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1998-08-26
1999-11-02
Baxter, Janet
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430316, 430394, 438445, 438696, 438447, H01L 2176, G03C 500
Patent
active
059767685
ABSTRACT:
The preferred embodiment of the present invention overcomes the disadvantages of the prior art by using hybrid resist to define a sidewall spacer region and form a new type of sidewall spacer. The preferred method allows for more controlled doping at the gate-source and gate-drain junctions by defining sidewall spacer troughs using hybrid resist. Implants can then be made through the troughs to precisely control the doping at the gate junctions. Additionally, sidewall spacers can then be formed in the sidewall spacer troughs. The dimensions of the sidewall spacers is determined by the hybrid resist and can thus be made smaller than traditional resist processes. Additionally, forming the sidewall spacers using hybrid resist allows for their width to be determined independent of the depth of the gate material.
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Brown Jeffrey S.
Dunn James S.
Holmes Steven J.
Huynh Cuc K.
Leidy Robert K.
Baxter Janet
Holloman Jill N.
International Business Machines - Corporation
Shkurko Eugene I.
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