Dry etching method

Details Dry etching method Dry etching method

1982-12-21

1983-09-27

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156662, 204192E, 252 791, H01L 21306

Patent

active

044067330

ABSTRACT:
In a dry etching method of etching Si, PF.sub.5 -gas is used as a source gas for plasma etching and reactive ion beam etching. The substrate can be etched at a higher rate as compared with the plasma etching in which CF.sub.4 -gas is used as the source gas.

REFERENCES:
patent: 4352724 (1982-10-01), Sugishima et al.

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