Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1995-06-06
1999-03-23
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 2041923, 20429811, C23C 1434
Patent
active
058854258
ABSTRACT:
An apparatus and method provide deposition on a surface by angled sputtering using a collimation grid having angled vanes which limit the distribution of trajectories of particles in at least one coordinate direction around a central axis oriented at an angle of less than 90.degree. to said surface; resulting in improved uniformity of deposition and/or selective favoring of deposition on surfaces at a high angle to the deposition surface (e.g. sidewalls). Substantially parallel orientation and uniform spacing of the sputtering target and deposition surface provides good uniformity of results over the deposition surface. The angled trajectories of sputtered particles provides improved deposition on sides of upstanding mandrel features and filling of recessed features of high aspect ratio, especially when the collimation grid is rotated about an axis generally perpendicular to the deposition surface. Angled, collimated deposition also allows for control of deposition at potentially sub-lithographic feature sizes by using portions of features as a mask with deposition being performed only on remaining exposed portions of features or deposition on selected sides of a mandrel feature. Sidewall image transfer techniques may thus be extended to non-symmetrical and singular features. At very shallow angles to the deposition surface, deposited material has a fibrous texture with greatly increased effective surface area.
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Hsieh Julian Juu-Chuan
Kenney Donald McAlpine
Licata Thomas John
Ryan James Gardner
International Business Machines - Corporation
McDonald Rodney G.
Nguyen Nam
Petraske, Esq. Eric W.
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