Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-08-22
2000-09-26
Nelms, David
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
H01L 2131
Patent
active
061242187
ABSTRACT:
A method for removing a native oxide and contaminants from a wafer surface at a relatively low temperature ranged from 100.degree. C. to 800.degree. C. uses H.sub.2 gas or hydrogen containing gas comprising ion sources chosen from impurity ions such as boron, phosphorus, arsenic, antimony, aluminum, and germanium activated by a plasma to be applied to the wafer surface in a vacuum furnace. A method for forming a thin oxide on a silicon wafer or substrate at a relatively low temperature ranged from 250.degree. C. to 800.degree. C. applies O.sub.2 or NO.sub.2 by using a plasma to the silicon wafer in a vacuum furnace.
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Berry Renee R.
Jusung Engineering Co. Ltd.
Nelms David
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