Method of making a semiconductor device having source/drain stru

Details Method of making a semiconductor device having source/drain stru Method of making a semiconductor device having source/drain stru

1998-09-30

2000-09-26

Thomas, Tom

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438514, 438526, 438531, 438532, 257288, 257336, 257344, 257408, H01L 21331, H01L 21335, H01L 21336

Patent

active

061241725

ABSTRACT:
A method of making a semiconductor device includes forming gate electrode over a substrate and a protective layer over the gate electrode. A portion of the protective layer is selectively removed to expose a peripheral region of the gate electrode. A remainder of the protective layer remains disposed over a central region of the gate electrode. An upper portion of the peripheral region of the gate electrode is then removed typically leaving an underlying portion. Often, a dopant material is implanted into the substrate adjacent to and beneath the underlying portion to simultaneously form lightly-doped and heavily-doped regions beneath and adjacent to the underlying portion, respectively. In addition, all or part of the underlying portion may be oxidized to provide a gate electrode with reduced width.

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Wolf, Silicon Processing for the VLSI Era, Lattice Press, vol. 2; Process Integration, pp. 354-363 (1960).
S. Wolf, "Silicon Processing for the VLSI Era", vol. 2, Lattice Press, CA, USA, 1990.

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