Method for manufacturing cylindrical lower electrode of DRAM cap

Details Method for manufacturing cylindrical lower electrode of DRAM cap Method for manufacturing cylindrical lower electrode of DRAM cap

1998-12-07

2000-09-26

Elms, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, 438396, H01L 218234

Patent

active

061241628

ABSTRACT:
A method for forming the cylindrical lower electrode of a capacitor includes the steps of providing a semiconductor substrate, and then forming an insulation layer over the substrate. Next, a contact opening is formed in the insulation layer, and then a conductive layer is formed, filling the contact opening and covering the insulation layer. Subsequently, a patterned photoresist layer is formed over the conductive layer. Thereafter, silylated photoresist spacers are formed on the sidewalls of the photoresist layer. Finally, using the spacers as a mask, the photoresist layer and a portion of the conductive layer are etched away to form the cylindrical-shaped lower electrode of a capacitor.

REFERENCES:
patent: 5736450 (1998-04-01), Huang et al.
patent: 5843821 (1998-12-01), Tseng
patent: 5989954 (1999-11-01), Lee et al.

Affiliated with

Also associated with

Rating

Method for manufacturing cylindrical lower electrode of DRAM cap does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing cylindrical lower electrode of DRAM cap, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing cylindrical lower electrode of DRAM cap will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2099299