Vapor phase etching of oxide masked by resist or masking materia

Details Vapor phase etching of oxide masked by resist or masking materia Vapor phase etching of oxide masked by resist or masking materia

1997-05-29

2000-06-13

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438723, 438725, H01L 21311

Patent

active

060749512

ABSTRACT:
Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.

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