Method of forming an ultrathin gate dielectric

Details Method of forming an ultrathin gate dielectric Method of forming an ultrathin gate dielectric

1999-01-20

2000-06-13

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438300, 438305, H01L 21336

Patent

active

060749199

ABSTRACT:
A method is provided for fabricating a transistor, the method including forming a semiconducting layer above a substrate layer, forming a first dielectric layer above the semiconducting layer and forming a sacrificial layer above the first dielectric layer. The method also includes forming an opening in the sacrificial layer, the first dielectric layer and the semiconducting layer to expose a channel region in the substrate layer. The method further includes forming a gate dielectric above the channel region in the substrate layer within the opening and forming a gate conductor above the gate dielectric within the opening. Moreover, the method includes removing the sacrificial layer to expose sides of the gate conductor and introducing a dopant into the semiconducting layer to form doped source/drain regions. In addition, the method includes forming dielectric spacers adjacent the gate conductor.

REFERENCES:
patent: 3749610 (1973-07-01), Swann et al.
patent: 4364166 (1982-12-01), Crowder et al.
patent: 5120668 (1992-06-01), Hsu et al.
patent: 5194926 (1993-03-01), Hayden
patent: 5597752 (1997-01-01), Niwa

Affiliated with

Also associated with

Rating

Method of forming an ultrathin gate dielectric does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming an ultrathin gate dielectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an ultrathin gate dielectric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2068091