Methods of forming dielectric layers and methods of forming capa

Details Methods of forming dielectric layers and methods of forming capa Methods of forming dielectric layers and methods of forming capa

1998-02-28

2000-11-14

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438778, 438784, 438785, 427569, 427574, 427579, H01L 2131, H01L 21469

Patent

active

061470112

ABSTRACT:
Methods of forming dielectric layers and methods of forming capacitors are described. In one embodiment, a substrate is placed within a chemical vapor deposition reactor. In the presence of activated fluorine, a dielectric layer is chemical vapor deposited over the substrate and comprises fluorine from the activated fluorine. In another embodiment, a fluorine-comprising material is formed over at least a portion of an internal surface of the reactor. Subsequently, a dielectric layer is chemical vapor deposited over the substrate. During deposition, at least some of the fluorine-comprising material is dislodged from the surface portion and incorporated in the dielectric layer. In another embodiment, the internal surface of the reactor is treated with a gas plasma generated from a source gas comprising fluorine, sufficient to leave some residual fluorine thereover. Subsequently, a substrate is exposed within the reactor to chemical vapor deposition conditions which are effective to form a dielectric layer thereover comprising fluorine from the residual fluorine.

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