Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-16
1999-02-16
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257139, 257401, H01C 2974, H01L 2976
Patent
active
058723773
ABSTRACT:
An insulated gate power semiconductor device includes an array of base contact openings in a continuous source region at a face of a semiconductor substrate, and an array of trenches therein. The trenches are preferably interspersed among the array of base contact openings to maximize the effective channel width of the inversion layer channels which are formed in a base region during forward conduction. The device contains a drift region of first conductivity type therein as well as a base region of second conductivity type which extends between the drift region and the first face. In addition, a continuous source region of first conductivity type is provided which extends from the base region to the first face. The source region also has a two-dimensional array of base contact openings therein through which the base region extends. To improve the forward current carrying capability, first and second pairs of opposing trenches are provided in the substrate, on opposites sides of each of the base contact openings in the array, and an insulated gate electrode is also provided in each of the first and second pairs of opposing trenches. To further improve the current carrying capability of the device, the trenches are preferably formed to have a large effective sidewall area (relative to a given lateral dimension) by increasing the number of sidewalls for each trench to twenty-eight (28).
REFERENCES:
patent: 4961100 (1990-10-01), Baliga et al.
patent: 4994871 (1991-02-01), Chang et al.
patent: 5136349 (1992-08-01), Yilmaz et al.
patent: 5177572 (1993-01-01), Murakami
patent: 5242845 (1993-09-01), Baba et al.
patent: 5282018 (1994-01-01), Hiraki et al.
patent: 5323040 (1994-06-01), Baliga
patent: 5329142 (1994-07-01), Kitagawa et al.
patent: 5525821 (1996-06-01), Harada et al.
Fahmy Wael
Samsung Electronics Co,. Ltd.
LandOfFree
Power semiconductor devices having highly integrated unit cells does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power semiconductor devices having highly integrated unit cells , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor devices having highly integrated unit cells will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2064658