Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-06-24
2000-11-14
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438202, 438278, 257349, 257355, 257173, 257360, H01L 21336
Patent
active
061469513
ABSTRACT:
A method of manufacturing a semiconductor device for preventing ESD damage is disclosed. A semiconductor device for preventing against ESD damage according to a first embodiment of the present invention, is fabricated as follows. Firstly, first impurity ions of a first conductivity type are implanted into a first region of a substrate of a semiconductor device using a first ion implantation, to form a first impurity ion layer. Here, a junction region will be formed in the first region and is connected to an input pad. Second impurity ions of the first conductivity type are then implanted into a second region of the substrate using a second ion implantation, to form a second impurity ion layer over the first ion impurity ion layer. Here, the second region includes the first region. Next, third impurity ions of a second conductivity type are implanted into the substrate of both sides of the first and second impurity ion layers, using a third ion implantation, to form a third impurity ion layer. The resultant structure is then annealed to form a first well for ESD of the first conductivity type and a second well of the second conductivity type. Here, the second well joins to the first well, and the upper edges of the first well is projected into the second well. Thereafter, junction regions of the first conductivity type of a high concentration are formed on the first and second wells.
REFERENCES:
patent: 4409726 (1983-10-01), Shiota
patent: 5369041 (1994-11-01), Duvvury
patent: 5477413 (1995-12-01), Watt
patent: 5554544 (1996-09-01), Hsu
patent: 5675168 (1997-10-01), Yamashita et al.
patent: 5777368 (1998-07-01), Wu et al.
patent: 5898193 (1999-04-01), Ham
patent: 5918127 (1999-06-01), Lee et al.
patent: 5923067 (1999-07-01), Voldman
patent: 5945713 (1999-08-01), Voldman
patent: 5976921 (1999-11-01), Maeda
Hyundai Electronics Industries Co,. Ltd.
Niebling John F.
Simkovic Viktor
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