Semiconductor device having an elevated active region formed in

Details Semiconductor device having an elevated active region formed in Semiconductor device having an elevated active region formed in

1997-01-08

1999-02-16

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438300, 438305, H01L 21336

Patent

active

058720383

ABSTRACT:
A process for forming a semiconductor device having an elevated active region is disclosed. The process includes forming a plurality of gate electrodes on the semiconductor substrate and disposing a thick oxide layer over the gate electrodes. A trench is formed in a thick oxide layer and is filled with a polysilicon material. The polysilicon material is subsequently doped in order to form an elevated active region above an active region of the substrate.

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S. Wolf. Silicon Processing for the VLSI Era, vol. 2: Processing Integration, pp. 154-169, copyright 1990, month unknown.

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