Semiconductor device and method of manufacture of the same

Details Semiconductor device and method of manufacture of the same Semiconductor device and method of manufacture of the same

1996-09-11

1999-10-19

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257397, 257513, H01L 2976

Patent

active

059693932

ABSTRACT:
A semiconductor device comprises a semiconductor substrate having a major surface, a semiconductor region defined between at least two trenches formed in the major surface, a first insulating layer formed on at least side walls of each of the trenches, and a second insulating layer formed in a predetermined area of the surface of the semiconductor region to contact the first insulating layer. The thickness of the first insulating layer at the top of the side walls is set larger than the thickness of the second insulating layer.

REFERENCES:
patent: 5221857 (1993-06-01), Kano
patent: 5650654 (1997-07-01), Noble

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacture of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacture of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacture of the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2059328