Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1998-11-05

2000-10-31

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438197, 438258, H01L 218234

Patent

active

061401854

ABSTRACT:
A first gate oxide film is formed on a surface of a silicon substrate. A first polycrystalline silicon film is formed on the first gate oxide film, and patterned so that its side surface is tapered. Silicon oxide film exposed through the first polycrystalline silicon is removed, and a second silicon oxide film having film thickness different from that of the first silicon oxide film is formed by thermal oxidation. Thus, dual gate oxide is manufactured. Accordingly, a method of manufacturing a semiconductor device is provided which can improve reliability of the transistor and can improve production yield, by suppressing generation of foreign matters.

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patent: 4795529 (1989-01-01), Kawasaki et al.
patent: 5336365 (1994-08-01), Goda et al.
patent: 5368684 (1994-11-01), Ishikawa et al.
patent: 5576226 (1996-11-01), Hwang
patent: 5972722 (1997-04-01), Visokay et al.

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