Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-04-01
1998-12-22
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438632, 438643, 438646, 438661, 438680, 438688, H01L 2128
Patent
active
058519173
ABSTRACT:
A wiring structure of semiconductor device and a method for manufacturing the same which fills up a contact hole of below one half micron. An insulating layer is formed on a semiconductor substrate, and a contact hole or a via hole is formed in the insulating layer. On the insulating layer, a first metal is deposited via a CVD method to form a CVD metal layer or a CVD metal plug filling up the contact hole. Then, the thus-obtained CVD metal layer or the CVD metal plug is heat-treated in a vacuum at a high temperature below the melting point of the first metal, thereby planarizing the surface thereof the CVD metal layer. A second metal is deposited via a sputtering method on the CVD metal layer or on the CVD metal plug to thereby form a sputtered metal layer. The contact hole is filled up with the first metal by the CVD method and then a reliable sputtered metal layer is deposited via a sputtering method. The wiring layer can be used for the semiconductor device of the next generation.
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Quach T. N.
Samsung Electronics Co,. Ltd.
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