Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-03-02
2000-08-15
Clark, Sheila V.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438670, 438545, 438669, 438655, H01L 2144
Patent
active
061036137
ABSTRACT:
A method for fabricating an interconnect with high aspect ratio contact members is provided. The interconnect is adapted to make electrical connections with a semiconductor component, such as a die, a wafer, or a chip scale package for testing. The method includes providing a substrate with projections, and forming a first conductive layer on the projections and substrate. The first conductive layer is then patterned using a resist mask having a thickness greater than a height of the projections. The resist mask can be a thick film resist that includes an epoxy resin, an organic solvent and a photo initiator. A second conductive layer is then formed on the projections, and patterned using a second resist mask having a thickness less than the height of the projections. Each contact member includes a projection with a tip portion having an exposed portion of the first conductive layer, and with a portion of the second conductive layer providing an electrical path to the projection.
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SUSS Report, Karl Suss, vol. 10, Third/Fourth Quarter 1996, pp. 1-3.
Clark Sheila V.
Gratton Stephen A.
Micro)n Technology, Inc.
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