Method of forming a single poly cylindrical flash memory cell ha

Details Method of forming a single poly cylindrical flash memory cell ha Method of forming a single poly cylindrical flash memory cell ha

1999-08-20

2000-08-15

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438226, 438283, H01L 21336

Patent

active

061035750

ABSTRACT:
A flash memory cell formed in a semiconductor substrate. The memory cell comprises: (a) a gate oxide formed atop said semiconductor substrate, said gate oxide including a thin region and a thick region; (b) a floating gate formed atop said thin region; (c) a control gate formed atop said thick region; (d) a drain region formed under said thin region and within said floating gate; (e) a source region formed under said thick region and outside said control gate; and (f) an insulating dielectric layer between said control gate and said floating gate.

REFERENCES:
patent: 5235544 (1993-08-01), Caywood
patent: 5502321 (1996-03-01), Matsushita
patent: 5633513 (1997-05-01), Yamazaki et al.
patent: 5780893 (1998-07-01), Sugaya
patent: 5792670 (1998-08-01), Pio et al.
patent: 5981342 (1999-11-01), Kakoschke et al.

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