Powered shield source for high density plasma

Details Powered shield source for high density plasma Powered shield source for high density plasma

1997-05-14

2000-08-15

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

118723I, 156345, 427569, 20419232, 20429806, 20429834, C23C 1434

Patent

active

061030708

ABSTRACT:
An insulative inter-turn shield positioned at the channel in coil windings to confine the plasma generated by energy radiated by the coil windings in an apparatus for sputtering material onto a workpiece. The insulative shield can prevent the escape of the plasma through the channel between the windings to thereby improve the effectiveness of the sputtering process. In addition, the shield can also block the passage of sputtered material through the channel, preventing the contamination of the vacuum chamber.

REFERENCES:
patent: 3619402 (1971-11-01), Wurm
patent: 3763031 (1973-10-01), Scow et al.
patent: 4336118 (1982-06-01), Patten et al.
patent: 4362632 (1982-12-01), Jacob
patent: 4568845 (1986-02-01), Uehara
patent: 4626312 (1986-12-01), Tracy
patent: 4661228 (1987-04-01), Mintz
patent: 4716491 (1987-12-01), Ohno et al.
patent: 4792732 (1988-12-01), O'Loughlin
patent: 4842703 (1989-06-01), Class et al.
patent: 4844775 (1989-07-01), Keeble
patent: 4865712 (1989-09-01), Mintz
patent: 4871421 (1989-10-01), Ogle et al.
patent: 4918031 (1990-04-01), Flamm et al.
patent: 4925542 (1990-05-01), Kidd
patent: 4941951 (1990-07-01), Matsuoka et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4990229 (1991-02-01), Campbell et al.
patent: 4999096 (1991-03-01), Nihei et al.
patent: 5065698 (1991-11-01), Koike
patent: 5091049 (1992-02-01), Campbell et al.
patent: 5122251 (1992-06-01), Campbell et al.
patent: 5135629 (1992-08-01), Sawada et al.
patent: 5146137 (1992-09-01), Gesche et al.
patent: 5175608 (1992-12-01), Nihei et al.
patent: 5178739 (1993-01-01), Barnes et al.
patent: 5206516 (1993-04-01), Keller et al.
patent: 5225740 (1993-07-01), Ohkawa
patent: 5231334 (1993-07-01), Paranjpe
patent: 5234529 (1993-08-01), Johnson
patent: 5234560 (1993-08-01), Kadlec et al.
patent: 5241245 (1993-08-01), Barnes et al.
patent: 5280154 (1994-01-01), Cuomo et al.
patent: 5304279 (1994-04-01), Coultas et al.
patent: 5312717 (1994-05-01), Sachdev et al.
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5361016 (1994-11-01), Ohkawa et al.
patent: 5366585 (1994-11-01), Robertson et al.
patent: 5366590 (1994-11-01), Kadomura
patent: 5368685 (1994-11-01), Kumihashi et al.
patent: 5397962 (1995-03-01), Moslehi
patent: 5401350 (1995-03-01), Patrick
patent: 5404079 (1995-04-01), Ohkuni et al.
patent: 5417834 (1995-05-01), Latz
patent: 5418431 (1995-05-01), Williamson et al.
patent: 5421891 (1995-06-01), Campbell et al.
patent: 5429070 (1995-07-01), Campbell et al.
patent: 5429710 (1995-07-01), Akiba et al.
patent: 5429995 (1995-07-01), Nishiyama et al.
patent: 5430355 (1995-07-01), Paranjpe
patent: 5431799 (1995-07-01), Mosely et al.
patent: 5503676 (1996-04-01), Shufflebotham et al.
patent: 5560776 (1996-10-01), Sugai et al.
patent: 5569363 (1996-10-01), Bayer et al.
patent: 5573595 (1996-11-01), Dible
patent: 5690795 (1997-11-01), Rosenstein et al.
U.S. patent application Ser. No. 08/647,184, filed May 9, 1996.
U.S. patent application Ser. No. 07/954,860, filed Sep. 30, 1992.
U.S. Ser. No. 09/049,839 (Atty. Dkt. 938.D1).
U.S. Ser. No. 09/049,276 (Atty. Dkt. 938.D2).
U.S. Ser. No. 08/853,024 (Atty. Dkt. 1186.P1).
European Search Report, App. No. 97303124.8, dated Aug. 22, 1997.
Search Report in EPO 97307864.5 dated Jul. 31, 1998.
M. Yamashita, "Sputter Type High Frequency Ion Source for Ion Beam Deposition Apparatus," Jap. J. Appl. Phys., vol. 26, pp. 721-727, 1987.
M. Yamashita, "Fundamental Characteristics of Built-in High Frequency Coil Type Sputtering Apparatus," J. Vac. Sci. Technol., vol. A7, pp. 151-158, 1989.
S.M. Rossnagel et al., "Metal Ion Deposition from Ionized Magnetron Sputtering Discharge," J. Vac. Sci. Technol., vol. B12, pp. 449-453, 1994.
S.M. Rossnagel et al., "Magnetron Sputter Deposition with High Levels of Metal Ionization," Appl. Phys. Lett., vol. 63, pp. 3285-3287, 1993.
S.M. Rossnagel, et al., "Filling Dual Damascene Interconnect Structures with AlCu and Cu Using Ionized Magnetron Deposition," J. Vac. Sci. Technol., vol. B13, pp. 125-129, 1995.
Y-W. Kim et al., "Ionized Sputter Deposition of AlCu: Film Microstructure and Chemistry," J. Vac. Sci. Technol., vol. A12, pp. 3169-3175, 1994.
J. Hopwood et al., "Mechanisms for Highly Ionized Magnetron Sputtering," J. Appl. Phys., vol. 78, pp. 758-765, 1995.
P. Kidd, "A Magnetically Confined and ECR Heated Plasma Machine for Coating and Ion Surface Modification Use," J. Vac. Sci. Technol., vol. A9, pp. 466-473, 1991.
W.M. Holber, et al., "Copper Deposition by Electron Cyclotron Resonance Plasma," J. Vac. Sci. Technol., vol. A11, pp. 2903-2910, 1993.
S.M. Rossnagel, "Directional and Ionized Sputter Deposition for Microelectronics Applications," Proc. of 3rd ISSP (Tokyo), pp. 253-260, 1995.
M. Matsuoka et al., Dense Plasma Production and Film Deposition by New High-Rate Sputtering Using an Electric Mirror, J. Vac. Sci. Technol., A 7 (4), 2652-2657, Jul./Aug. 1989.
U.S. patent application Ser. No. 08/680,335, filed Jul. 10, 1996 (Atty. Dk. 1390-CIP/PVD/DV).
N. Jiwari et al., "Helicon wave plasma reactor employing single-loop antenna," J. of Vac. Sci. Technol., A 12(4), pp. 1322-1327, Jul./Aug. 1994.
Search report dated Feb. 27, 1997, EPC application No. 96308251.6.
U.S. patent application Ser. No. 08/677,588, filed Jul. 9, 1996, abandoned (Atty. Dk. 1402/PVD/DV).
U.S. patent application Ser. No. 08/644,096, filed May 10, 1996, abandoned (Aty. Dk. 1390/PVD/DV).
U.S. patent application Ser. No. 08/461,575, filed Sep. 30, 1992 (Atty. Dk. 364.F1).
U.S. patent application Ser. No. 08/310,617 now U.S. Pat 5589224.
U.S. patent application Ser. No. 08/567,601 now U.S. Pat 5803977.
U.S. patent application Ser. No. 08/647,182, filed May 9, 1996 (Atty. Dk. 1186).
U.S. patent application Ser. No. 08/559,345, filed Nov. 15, 1995 (Aty. Dk. 938/PVD/DV).
U.S. patent application Ser. No. 08/733,620, filed Oct. 17, 1996 (Attorney Docket # 1457/PVD/DV).
U.S. patent application Ser. No. 08/741,708, filed Oct. 31, 1996 (Attorney Docket # 1590/PVD/DV).
U.S. patent application Ser. No. 08/559,345, filed Nov. 15, 1995 (Aty. Dk. 938).
U.S. patent application Ser. No. 08/730,722, filed Oct. 8, 1996 (Aty. Dk. 1207/MD/PVD/DV).

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