Optical monitoring of growth and etch rate of materials

Optics: measuring and testing – By configuration comparison – With photosensitive film or plate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

1566261, 1566441, 1566621, 156345, 356381, 356357, H01L 21306, B44C 122

Patent

active

054651549

ABSTRACT:
A reflective method for monitoring the etch rate or growth rate of a material, such as a semiconductor material, that may be initially at least partly covered by another layer of a different material. An aperture in the overlying material is formed to expose a portion of the surface of the layer to be etched or grown, and a monochromatic light beam is directed at the exposed surface to form a signal which can be used to monitor the processing of the material.

REFERENCES:
patent: 4510605 (1985-04-01), George et al.
patent: 4573465 (1986-03-01), Sugiyama et al.
patent: 4618262 (1986-10-01), Maydan et al.
patent: 4637027 (1987-01-01), Shirasaki et al.
patent: 4660205 (1987-04-01), Harter et al.
patent: 4660979 (1987-04-01), Muething
patent: 4680084 (1987-07-01), Heimann et al.
patent: 4747110 (1988-05-01), Takahashi et al.
patent: 4751706 (1988-06-01), Rohde et al.
patent: 4767495 (1988-08-01), Nishioka
patent: 4838987 (1989-06-01), Dobson
patent: 4975141 (1990-12-01), Greco et al.
M. Born & E. Wolf, Principles of Optics, Pergamon Press, Fifth Edition, 1975, Chap. 1.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Optical monitoring of growth and etch rate of materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical monitoring of growth and etch rate of materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical monitoring of growth and etch rate of materials will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-200253

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.