Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1993-01-08
1994-11-22
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, 257781, H01L 2348, H01L 2946, H01L 2962, H01L 2964
Patent
active
053671953
ABSTRACT:
This invention relates generally to structure and method for preventing metal diffusion between a noble metal layer and an adjoining non-noble metal layer, and more specifically to new structures and methods for providing a superbarrier structure between copper and an adjoining noble metal layer. This is achieved by sequentially deposited a layer of non-noble metal, a layer of titanium, a layer of molybdenum, and a layer of noble or relatively less noble metal as the interconnecting metallurgy. This invention also relates to an improved multilayer metallurgical pad or metallurgical structure for mating at least a portion of a pin or a connector or a wire to a substrate.
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DiGiacomo Giulio
Kim Jung-Ihl
Narayan Chandrasekhar
Purushothaman Sampath
Ahsan Aziz M.
Clark S. V.
International Business Machines - Corporation
James Andrew J.
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