Method of stress-free development of irradiated polymethylmetacr

Details Method of stress-free development of irradiated polymethylmetacr Method of stress-free development of irradiated polymethylmetacr

1981-09-17

1983-07-12

Downey, Mary F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430309, 430326, 430331, 430942, 430966, G03C 530

Patent

active

043931294

ABSTRACT:
Stress and crack-free development of resist layers or films, for example composed of PMMA, used in production of galvanically generated flat precision parts is achieved. Resist layers having a thickness of at least 100 .mu.m are exposed via electron lithography or x-ray lithography techniques whereby very fine structure patterns having dimensions in the micron and sub-micron range are attained and developed with a developer comprised of a mixture of a material selected from the glycol ether group, a material selected from the primary amine group, a material selected from the aqueous group and a material selected from the azine group. Aspect ratios of 30:1 are achieved without dark errosion. Residual PMMA components remaining after development, as well as the developer itself, are fully removed with a post-development rinsing with water so that no disruptive layer residues remain on the surface which has been uncovered through development.

REFERENCES:
patent: 3255004 (1966-06-01), Thommes
patent: 3475171 (1969-10-01), Alles
patent: 4055515 (1977-10-01), Kirch
patent: 4130425 (1978-12-01), Boyd
patent: 4267260 (1981-05-01), Miura et al.
patent: 4302529 (1981-11-01), Lai

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