Method for forming metal lines by sputtering

Details Method for forming metal lines by sputtering Method for forming metal lines by sputtering

1996-03-07

1997-08-26

Weisstuch, Aaron

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438645, 438649, 438653, 438655, 20419217, C23C 1434

Patent

active

056606966

ABSTRACT:
A method of forming metal lines such as titanium and aluminum on a semiconductor wafer by sputtering at a high temperature, preferably in the range of approximately 500.degree. C. to 800.degree. C. This method decreases the contact resistance between the layers while reducing the number of processing steps.

REFERENCES:
patent: 5427666 (1995-06-01), Mueller et al.

Affiliated with

Also associated with

Rating

Method for forming metal lines by sputtering does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming metal lines by sputtering, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming metal lines by sputtering will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1985462