Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

1998-12-30

2000-10-03

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257203, 257204, 257377, 257382, H01L 2710, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

06127707&

ABSTRACT:
A semiconductor device and a fabricating method thereof are provided. In the semiconductor device, active regions of first and second conductivity types are formed on a semiconductor substrate, apart from each other by a predetermined distance, and a silicide layer is formed on the active regions, for connecting the active regions to one another. By forming an offset area between active regions or gates of opposite conductivity types to space them from each other by a predetermined distance, there exists no area having an increased dopant concentration and a reliable silicidation is ensured.

REFERENCES:
patent: 4215322 (1980-07-01), Iwanami
patent: 4654548 (1987-03-01), Tanizawa et al.
patent: 4777150 (1988-10-01), Deneuville et al.
patent: 5119160 (1992-06-01), Hall
patent: 5294822 (1994-03-01), Verrett
patent: 5478761 (1995-12-01), Komori et al.
patent: 5621232 (1997-04-01), Ohno
patent: 5739573 (1998-04-01), Kawaguchi
patent: 5818092 (1998-10-01), Bai et al.
patent: 5874342 (1999-02-01), Tsai et al.

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