Method for forming thermal oxide film of silicon carbide semicon

Details Method for forming thermal oxide film of silicon carbide semicon Method for forming thermal oxide film of silicon carbide semicon

1998-12-18

2000-10-24

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438770, H01L 2131

Patent

active

061367273

ABSTRACT:
In a method for forming a thermal oxide film of a silicon carbide semiconductor device, a preliminary treatment is conducted in which a silicon carbide substrate is heated to 800 to 1200.degree. C., in an atmosphere comprising hydrogen or a mixture of hydrogen and inert gas, and then a silicon dioxide film is formed on the substrate by thermal oxidation. A slight amount of hydrochloric acid gas may be added to the atmosphere for the preliminary treatment.

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K. Ueno, "Effects of the Cooling-off Condition on the Oxidation Process in 6H-SiC", Sep. 1997, Paper presented at the 7th Int. Conf. on Silicon Carbide,III-Nitrides & Related Materials, Stockholm, Sweden.
H. Tsuchida et al., "FTIR-ATR Analysis of SiC(000T) and SiC(0001) Surfaces", Aug. 31-Sep. 5, 1997, Int. Conf. on Silicon Carbide, III-Nitrides and Related Materials-1997 (ICSC III-N' 97), Stockholm, Sweden.
C.M. Zetterling, "The Influence of Dry Cleaning Technique on Thermal Oxides Grown on 4H and 6H p-type SiC", 1996, p. 605-608, Inst. Phys, Conf. Ser. No 142:Chapter 3, IOP Publishing Ltd.

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