Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-06-29
2000-10-24
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438592, 438596, H01L 21336
Patent
active
061366552
ABSTRACT:
An active FET body device which comprises an active FET region including a gate, a body region and electrical connection between said gate and said body region that is located within the active FET region is provided along with various methods for fabricating the devices. The electrical connection extends over substantially the entire width of the FET.
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Assaderaghi Fariborz
Bertin Claude L.
Gambino Jeffrey P.
Hsu Louis Lu-Chen
Mandelman Jack Allan
Chaudhari Chandra
International Business Machines - Corporation
Shkurko Eugene I.
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