Method of making low voltage active body semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438592, 438596, H01L 21336

Patent

active

061366552

ABSTRACT:
An active FET body device which comprises an active FET region including a gate, a body region and electrical connection between said gate and said body region that is located within the active FET region is provided along with various methods for fabricating the devices. The electrical connection extends over substantially the entire width of the FET.

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Mandelman et al, Floating-Body Concerns for SOI Dynamic Random Access Memory (DRAM), Proceedings 1996 IEEE International SOI Conference, Oct. 1996: 136-137.

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