Method of making a dynamic random access memory

Details Method of making a dynamic random access memory Method of making a dynamic random access memory

1998-12-23

2000-10-24

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 218242

Patent

active

061366420

ABSTRACT:
A method of fabricating a dynamic random access memory includes forming a dummy layer over the isolation layer, in which the dummy layer has a higher etching selectivity than oxide. A dielectric layer is applied to isolate the bit lines. Then, a passivation layer is formed over the entire structure and a node contact opening is formed thereon. A liner oxide layer is then formed in the node contact opening to isolate the bit lines and the electrode of the capacitor. The node contact opening has a larger misalignment tolerance.

REFERENCES:
patent: 5600166 (1997-02-01), Clementi et al.

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