Method for forming a bipolar-based active pixel sensor cell with

Details Method for forming a bipolar-based active pixel sensor cell with Method for forming a bipolar-based active pixel sensor cell with

1998-06-02

2000-10-24

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438309, 438329, 438336, H01L 218238

Patent

active

061366358

ABSTRACT:
The dynamic range is increased and the noise level is reduced in a bipolar-based active pixel sensor cell with a capacitively coupled base region by forming the capacitor over a portion of the base region and the field oxide region of the cell. In addition, the noise levels are also reduced by heavily-doping the material which forms a portion of the bottom plate of the capacitor with the same conductivity type as the base region of the cell, and by placing the material which forms the portion of the bottom plate in direct contact with the base region.

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