Semiconductor yaw rate sensor

Details Semiconductor yaw rate sensor Semiconductor yaw rate sensor

1994-12-13

1996-03-19

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257417, 257418, 257420, 7351402, 7351415, 7351436, 73DIG1, H01L 2982

Patent

active

055005497

ABSTRACT:
A semiconductor yaw rate sensor, which can be structured easily by means of an IC fabrication process, such that a yaw rate detection signal due to a current value is obtained by means of a transistor structure and a method of producing the same is disclosed. A weight supported by beams is disposed at a specified interval from a surface of a semiconductor substrate, and movable electrodes and excitation electrodes are formed integrally with the weight. Fixed electrodes for excitation use are fixed to the substrate in correspondence to the excitation electrodes. Along with this, source electrodes as well as drain electrodes are formed by means of a diffusion layer on a surface of the substrate at positions opposing the movable electrodes, such that drain current changes in correspondence with displacement of the movable electrodes by means of Corioli's force due to yaw rate, and the yaw rate is detected by this current.

REFERENCES:
patent: 4571661 (1986-02-01), Hoshino
patent: 4598585 (1986-07-01), Boxenhorn
patent: 5285097 (1994-02-01), Hirai

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