Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-08-15
1998-05-26
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438589, H01L 21336
Patent
active
057563861
ABSTRACT:
A low-voltage high-current discrete insulated-gate field-effect transistor which is made by a very economical process with two silicon etches. A buried poly gate gates conduction along a trench sidewall. The channel is provided by the residuum of an epi layer, and the source diffusion is provided by an unmasked implant which is screened only by various grown oxides.
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Chaudhari Chandra
Galanthay Theodore E.
Jorgenson Lisa K.
SGS-Thomson Microelectronics Inc.
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