Plug-based floating gate memory

Details Plug-based floating gate memory Plug-based floating gate memory

1996-01-25

1998-05-26

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438259, 257315, 257316, H01L 218247

Patent

active

RE0358100

ABSTRACT:
A device and a method of forming a floating gate memory transistor of very small area, thereby allowing a high-density integrated circuit chip, more specifically for Erasable Programmable Read-Only Memory (EPROM) or similar non-volatile devices.
In a first embodiment, a method is disclosed that fabricates a programmable memory cell described as a "diffusion cut" cell where a plug-type floating gate contact hole cuts through a diffusion region and partially into a substrate region. In a second embodiment, a method is disclosed that fabricates a programmable memory cell described as an "oxide cut" cell, where the plug-type floating gate contact hole only penetrates a silicon oxide layer. This "oxide cut" cell is formed in a similar fashion except penetration does not go into the diffusion region or substrate.

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patent: 5399516 (1995-03-01), Bergendahl et al.
patent: 5460989 (1995-10-01), Wake

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