Method and apparatus for etchback endpoint detection

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156345, H01L 21306, C23F 102

Patent

active

055520162

ABSTRACT:
A method and apparatus (110) for determining the endpoint (e.g., TC1) of an etching step in a plasma etching process (101) for use in semiconductor wafer manufacturing. In one embodiment, an optical bandpass filter (e.g., 1542) is used for detecting a wavelength of electromagnetic emissions from elements of a chlorine-argon plasma employed to etch a titanium nitride layer from a semiconductor wafer so as to achieve a more precise determination of the endpoint of the process step. In another embodiment, a plurality of wavelengths (e.g., 1541-1544) in the electromagnetic emissions from elements in the plasma are combined for even more precise determination of the endpoint of a process step. The emissions of interest may be from the same or different elements in the plasma which may be produced by the etching materials or by materials from the wafer being etched.

REFERENCES:
patent: 4246060 (1981-01-01), Keller
patent: 4263089 (1981-04-01), Keller
patent: 4312732 (1982-01-01), Degenkold et al.
patent: 4328068 (1982-05-01), Curtis
patent: 4491499 (1985-01-01), Jerde et al.
patent: 4615761 (1986-10-01), Tada et al.
patent: 5014217 (1991-05-01), Savage
patent: 5045149 (1991-09-01), Nulty
patent: 5160402 (1992-11-01), Cheng
patent: 5242532 (1993-09-01), Cain
patent: 5308414 (1994-05-01), O'Neill et al.
patent: 5450205 (1995-09-01), Sawin et al.
PCT Search Report for PCT/US94/04652 dated Jul. 29, 1994.
"Application of Optical Emission Spectroscopy to Semiconductor Processing", Spectroscopy, vol. 2 (No. 8), pp. 40-42, (1987).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for etchback endpoint detection does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for etchback endpoint detection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for etchback endpoint detection will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1947800

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.