Method of forming C49-structure tungsten-containing titanium sal

Details Method of forming C49-structure tungsten-containing titanium sal Method of forming C49-structure tungsten-containing titanium sal

1998-12-17

2000-05-30

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438533, 438649, 438664, 438683, H01L 21336

Patent

active

060690453

ABSTRACT:
A C49-structured titanium silicide film contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not more than 20 at %. On silicon, there is formed a titanium film which contains at least a refractory metal having a higher melting point than titanium, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not more than 20 at %. The titanium film is then subjected to a heat treatment in an inert gas atmosphere for causing a silicidation reaction, thereby to form a C49-structured titanium silicide film which contains the above at least a refractory metal in the form of a substitutional solid solution.

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