Static information storage and retrieval – Read/write circuit – Precharge
Patent
1988-01-26
1989-12-19
Popek, Joseph A.
Static information storage and retrieval
Read/write circuit
Precharge
365190, G11C 700
Patent
active
048887374
ABSTRACT:
Plural pairs of complementary data lines coupled with plural memory cells are precharged to a positive source voltage level and a pair of common complementary data lines corresponding to the plural pairs of complementary data lines are precharged to ground potential. In synchronism with selection of a word line, a pair of the plural pairs of complementary data lines and the common complementary data lines are coupled through a switch circuit. A sense amplifier coupled with the common complementary data lines is supplied with a voltage composed of a voltage of approximately half the voltage value of the positive supply voltage and a readout voltage from the memory cell superposed thereon. Thus, after the precharging operation, there is no need for an equalizing operation before a word line is selected. Therefore, high-speed reading can be achieved.
REFERENCES:
patent: 4665507 (1987-05-01), Gondou et al.
Hitachi , Ltd.
Hitachi VLSI Engineering Corp.
Popek Joseph A.
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