Methods of forming field oxide and active area regions on a semi

Details Methods of forming field oxide and active area regions on a semi Methods of forming field oxide and active area regions on a semi

1999-03-31

2000-02-15

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438225, 438443, H01L 2176, H01L 21265

Patent

active

060252367

ABSTRACT:
Methods of forming a field oxide region and an adjacent active area region are described. A semiconductive substrate is masked with an oxidation mask while an adjacent area of the substrate remains unmasked by the oxidation mask. The substrate is exposed to conditions effective to form a field oxide region in the adjacent area. The field oxide region has a bird's beak region which extends toward the active area. In accordance with a first implementation, a portion of the semiconductive substrate is removed after removal of the oxidation mask but before the formation and removal of a sacrificial oxide layer. In accordance with this implementation, removal of the semiconductive substrate material forms an undercut region under the bird's beak region which is subsequently filled in with material when the sacrificial oxide layer is formed. In accordance with a second implementation, a portion of the semiconductive substrate is removed after formation and removal of the sacrificial oxide layer. In accordance with this implementation, removal of the semiconductive substrate material forms an undercut region under the bird's beak region which is subsequently filled in with material when the gate dielectric layer is formed.

REFERENCES:
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patent: 5496750 (1996-03-01), Mosiehi
patent: 5604157 (1997-02-01), Dai et al.
patent: 5728620 (1998-03-01), Park
patent: 5736451 (1998-04-01), Gayet
Silicon Processing for the VLSI Era, S. Wolf, vol. 2, Chap. 2.

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