Short channel transistor having resistive gate extensions

Details Short channel transistor having resistive gate extensions Short channel transistor having resistive gate extensions

1998-03-10

2000-02-15

Thomas, Tom

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438299, 438301, 438303, 438305, 438542, 438545, 438546, 257344, 257346, 257335, 257336, H01L 21334, H01L 21335, H01L 21336, H01L 2138

Patent

active

060252359

ABSTRACT:
A semiconductor apparatus formed on a semiconductor substrate includes a first active region in the substrate, and a second active region adjacent to the surface of the substrate separated from the first active region by a channel region. A gate oxide region may overlie at least a portion of the first and second active regions. The apparatus further includes a gate positioned over the channel region and having a first end and a second end respectively associated with the first and second active regions. The gate includes a first low conductive region and a second low conduction region at said first and second ends, respectively.
A method for making the transistor structure of the present invention is also provided. In one aspect, the invention comprises: forming a transistor region on a silicon substrate, the region including a first and second spacers on a first side and a second side of the region, respectively, the spacers overlying a first oxide layer on the surface of the substrate; etching the first oxide layer leaving a first and second gaps between the first and second spacers, respectively, and the silicon substrate; forming a gate oxide layer overlying the surface of the substrate in the transistor region, the gate oxide having a thickness; and filling the transistor region with polysilicon to cover the gate oxide region.

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