Method for manufacturing thick gate oxide device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438221, 438257, 438931, H01L 21336

Patent

active

060252340

ABSTRACT:
A method for forming devices having a thick gate oxide. The method comprises the steps of providing a substrate having different device areas already defined thereon through shallow trench isolation, then forming a first gate oxide layer over the substrate. Next, a silicon nitride layer is formed over the first gate oxide layer, then patterned using a mask to selectively expose the first gate oxide layer in the thick gate oxide area. Subsequently, a thermal oxidation is performed to directly grow an oxide layer over the first gate oxide layer to form a thicker second gate oxide layer. Since no gate oxide layer is removed in this invention, the distribution of ions implanted in previous processing steps will remain unchanged. Therefore, the fabricated devices will have more stable properties and better reliability.

REFERENCES:
patent: 5502009 (1996-03-01), Lin et al.
patent: 5595922 (1997-01-01), Tigelaar et al.
patent: 5885903 (1999-03-01), Torek et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing thick gate oxide device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing thick gate oxide device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing thick gate oxide device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1905357

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.