Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-12-17
2000-02-15
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438221, 438257, 438931, H01L 21336
Patent
active
060252340
ABSTRACT:
A method for forming devices having a thick gate oxide. The method comprises the steps of providing a substrate having different device areas already defined thereon through shallow trench isolation, then forming a first gate oxide layer over the substrate. Next, a silicon nitride layer is formed over the first gate oxide layer, then patterned using a mask to selectively expose the first gate oxide layer in the thick gate oxide area. Subsequently, a thermal oxidation is performed to directly grow an oxide layer over the first gate oxide layer to form a thicker second gate oxide layer. Since no gate oxide layer is removed in this invention, the distribution of ions implanted in previous processing steps will remain unchanged. Therefore, the fabricated devices will have more stable properties and better reliability.
REFERENCES:
patent: 5502009 (1996-03-01), Lin et al.
patent: 5595922 (1997-01-01), Tigelaar et al.
patent: 5885903 (1999-03-01), Torek et al.
Bowers Charles
Brewster William M.
United Microelectronics Corp.
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