Method of fabricating split-gate source side injection flash mem

Details Method of fabricating split-gate source side injection flash mem Method of fabricating split-gate source side injection flash mem

1998-05-12

2000-02-15

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438286, 438304, H01L 218247

Patent

active

060252294

ABSTRACT:
A split-gate source side injection flash memory structure that utilizes the polysilicon spacers formed on the sidewalls of the control gate and the floating gate, and the difference in concentration and depth between the source region and the drain region. By applying suitable operating voltage to the polysilicon spacers above the respective source region and drain region, operation of the flash memory can be properly controlled. Because a source-side injection is obtained in this invention, hence a higher programming efficiency is achieved.

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patent: 5899718 (1999-05-01), Chen et al.
patent: 5915176 (1999-06-01), Lim

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