Method of conductor isolation from a conductive contact plug

Details Method of conductor isolation from a conductive contact plug Method of conductor isolation from a conductive contact plug

1992-12-10

1993-10-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437189, 437190, 148DIG50, 156649, 156651, H01L 2128

Patent

active

052525171

ABSTRACT:
The method of the present invention introduces a fabrication method for providing capacitor cell polysilicon isolation from a polysilicon contact plug in a semiconductor fabrication process, by providing a contact opening through a first insulating layer, the cell polysilicon layer, and a second insulating layer, thereby exposing patterned edges of the cell polysilicon and providing access to an underlying diffusion area. The contact opening is then filled with a conductively doped polysilicon and an upper portion the polysilicon filler is removed until its top surface is recessed below the bottom surface of the cell polysilicon. Next, the cell polysilicon's patterned edges and the top of the first conductive material are oxidized which is followed by an anisotropic etch to remove the oxide only from the top of the polysilicon filler while retaining a major portion of the oxide on the cell polysilicon's patterned edges. Finally, the contact opening is refilled with conductively doped polysilicon.

REFERENCES:
patent: 4685197 (1987-08-01), Tigelaar et al.
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 5010039 (1991-04-01), Ku et al.
patent: 5114879 (1992-05-01), Madan
patent: 5198387 (1993-03-01), Tang
patent: 5204286 (1993-04-01), Doan

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