Semiconductor device and method for forming the same

Details Semiconductor device and method for forming the same Semiconductor device and method for forming the same

1996-03-01

1998-07-14

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, H01L 21336

Patent

active

057803455

ABSTRACT:
There is disclosed a short-channel FET which is excellent in properties and adapted for mass production. FETs of this construction can be packed at a high density. There is also disclosed a method for forming this FET. The semiconductor substrate of this FET has a plateau-shaped portion protruding from the body of the substrate. This plateau-shaped portion is substantially identical in contour with a gate electrode formed over it. The gate electrode is in register with the plateau-shaped portion. With respect to the relation of doped regions of the substrate becoming the source and drain to the channel region, the narrowest portion in the channel region is not in contact with a gate-insulating film.

REFERENCES:
patent: 4095251 (1978-06-01), Dennard et al.
patent: 4683645 (1987-08-01), Naguib et al.
patent: 4737471 (1988-04-01), Shirato et al.
patent: 4956691 (1990-09-01), Culley et al.
patent: 4997777 (1991-03-01), Boivin
patent: 5041855 (1991-08-01), Gaulandris et al.
patent: 5124272 (1992-06-01), Saito et al.

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