Method of producing high quality silicon surface for selective e

Details Method of producing high quality silicon surface for selective e Method of producing high quality silicon surface for selective e

1995-12-20

1998-07-14

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438478, 438481, 438963, 438974, 438413, H01L 21336

Patent

active

057803439

ABSTRACT:
A method of producing a high quality silicon surface prior to carrying out a selective epitaxial growth of silicon process for forming an active device region on a substrate. The process flow of the present invention eliminates the need for the sacrificial oxidation layer typically used in such processes. After the etching of a seed hole through the isolation oxide layer using a reactive ion etch a short, low power C.sub.2 F.sub.6 etch is performed. The present invention provides a simple and cost-effective way to eliminate reactive ion etch damage prior to SEG growth because the dry C.sub.2 F.sub.6 etch can be done in the same etch reactor in which the seed hole oxide etch is performed. In addition, the re-oxidation (sacrificial oxide) step is eliminated, reducing the number of process steps.

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