Method for fabricating dielectric films for non-volatile electri

Details Method for fabricating dielectric films for non-volatile electri Method for fabricating dielectric films for non-volatile electri

1996-12-05

1998-07-14

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438585, 438594, 438770, H01L 21316

Patent

active

057803420

ABSTRACT:
A method for forming a high-performance oxide as a tunneling dielectric for non-volatile memory applications. A silicon film containing amorphous silicon and good crystalline silicon micrograins is deposited in a silicon substrate by a LPCVD system. Then, a oxidation is performed at a temperature selected in a range such that non-uniform epitaxial silicon growth occurs at the silicon substrate. During an initial thermal oxidation process, the amorphous silicon region is quickly oxidized to form SiO.sub.2 and the good-crystalline silicon micrograins are also quickly oxidized to form the silicon-rich SiO.sub.2 (TOAS). In a following oxidation process, silicon precipitates are formed at the silicon-enriched region and the non-uniform epitaxial silicon growth is also enhanced at the silicon-enriched region. The enhanced non-uniformed silicon growth creates mild microtips. The silicon precipitates connect to the mild silicon microtips. Subsequently during the oxidation the ultra-high and sharp microtips are formed.

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