Method of manufacturing a semiconductor memory device with a tre

Details Method of manufacturing a semiconductor memory device with a tre Method of manufacturing a semiconductor memory device with a tre

1997-03-05

1998-07-14

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438243, 438386, H01L 218242

Patent

active

057803323

ABSTRACT:
A semiconductor memory device includes a semiconductor substrate, an element isolation film formed on the substrate, element formation regions each defined in an island form in the surface of the substrate by the element isolation film, trenches formed in the element formation regions, respectively, capacitors each formed in a corresponding one of the trenches, each having a plate electrode formed of the substrate, a capacitor insulating film formed on the inner wall of the trench and a storage electrode filled in the trench with the capacitor insulating film disposed therebetween, transistors each formed in the element formation regions, and having a gate electrode which is formed to extend over the substrate and pass over the trench and the element formation region, a first impurity diffusion layer formed on one side of the gate electrode, a second impurity diffusion layer formed on the other side of the gate electrode, and channel regions formed on the element formation region on both sides of the trench below the gate electrode and respectively connected to the first and second impurity diffusion layers, connection electrodes for respectively connecting the storage electrodes to the first impurity diffusion layers, and signal transmission lines respectively connected to the second impurity diffusion layers.

REFERENCES:
patent: 5250458 (1993-10-01), Tsukamoto et al.
patent: 5360758 (1994-11-01), Bronner et al
patent: 5618745 (1997-04-01), Kita

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