Method of making a high-voltage MOS transistor with increased br

Details Method of making a high-voltage MOS transistor with increased br Method of making a high-voltage MOS transistor with increased br

1995-06-07

1998-02-24

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 21336

Patent

active

057211701

ABSTRACT:
In a high-voltage MOS transistor that utilizes a lightly-doped drain region to isolate a heavily-doped drain region from the substrate, the reverse bias which can be applied across the drain-to-substrate junction of the transistor is increased by reducing the width of the heavily-doped drain region.

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