Reduction of surface contamination in post-CMP cleaning

Details Reduction of surface contamination in post-CMP cleaning Reduction of surface contamination in post-CMP cleaning

1996-10-18

1998-06-30

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438723, 438959, 438691, 438692, 438690, 438906, H01L 21461

Patent

active

057733600

ABSTRACT:
Chemical-mechanical polishing is followed with a scrubbing procedure for the removal of any particulate contaminants. Scrubbing is succeeded by a plasma etching step, using a parallel electrode plasma etcher, a downstream plasma etcher, or similar apparatus. Plasma etching is performed for about 30 seconds using CF.sub.4 as the etching gas, so that about 300 Angstroms of the post CMP surface is removed. This results in the almost total elimination of residual mobile ions from the polished surface without the introduction of microgrooves and similar blemishes as is often the case when HF is used for this purpose.

REFERENCES:
patent: 5371047 (1994-12-01), Greco et al.
patent: 5389194 (1995-02-01), Rostoker et al.
patent: 5399234 (1995-03-01), Yu et al.
patent: 5478436 (1995-12-01), Winebarger et al.
patent: 5663102 (1997-09-01), Park
Davarik, B., et al. "A new planarization technique, using a combination of RIE and CMP", International Electron Devices Meeting 1989 pp. 61-64 (abstract only).
Wolf, S., et al "Silicon Processing for the VLSI Era vol. 1" Lattice Press, Calif. pp. 569-571, 1986.

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