Method for forming twin-tub wells in substrate

Details Method for forming twin-tub wells in substrate Method for forming twin-tub wells in substrate

1996-08-20

1998-06-30

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438787, 438919, H01L 218238

Patent

active

057733350

ABSTRACT:
A method for forming twin-tub wells in a semiconductor substrate is disclosed. The present invention includes forming a first silicon oxide layer on the substrate. A silicon nitride layer is patterned on a portion of the first silicon oxide layer by a photoresist mask. First-type ions are implanted over the substrate not covered by the silicon nitride layer. Next, a second silicon oxide layer formed by a liquid phase deposition method is deposited on a portion of the first silicon oxide layer not covered by the silicon nitride layer. After the silicon nitride layer is removed, second-type ions are implanted over the substrate not covered by the second silicon oxide layer. Finally, the substrate is drived-in such that a first-type well and a second-type well are formed under the first silicon oxide layer.

REFERENCES:
patent: 4613885 (1986-09-01), Haken
patent: 5024961 (1991-06-01), Lee et al.
patent: 5047356 (1991-09-01), Li et al.
patent: 5134085 (1992-07-01), Gilgen et al.
patent: 5411899 (1995-05-01), Lee et al.
patent: 5525823 (1996-06-01), Chan
patent: 5543252 (1996-08-01), Shibata et al.

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