Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-08-14
2000-06-20
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438305, H01L 21336
Patent
active
060777478
ABSTRACT:
In a semiconductor device manufacturing method, a gate insulating film (2), a first gate electrode forming material film (4), a first film (10) and a second film (11) are formed on a semiconductor substrate (1), then a channel region (3) is formed by doping the substrate (1) with impurities through an opening portion formed in the second film (11) which is formed at inner edge of an opening of the first film (10), then a second gate electrode forming material film (9) formed thereon is left within the opening portion of the second film (11) through etching back thereof, then a groove is formed by removing the second film (11) with the remaining film (9) and the first film (10) used as an etching mask, then a low-concentration impurity diffusion layer (12) and an impurity layer (13) of the opposite conduction type to that of the layer (12) are formed in the substrate (1), then a portion of the film (4) exposed at the bottom of the groove is removed, then a side wall (14) of insulating material is formed in the groove, then the films (10, 4) around the side wall (14) are removed, and then a source/drain diffusion layer (15) is formed by doping the substrate (1) with impurities with the remaining films (4, 9) and the side wall (14) used as a mask.
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Lindsay Jr. Walter L.
NEC Corporation
Niebling John F.
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