Method of manufacturing a field effect transistor

Details Method of manufacturing a field effect transistor Method of manufacturing a field effect transistor

1997-05-05

2000-05-23

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438286, 438305, 438592, 438595, H01L 218238

Patent

active

060665343

ABSTRACT:
A field effect transistor includes a semiconductor substrate; a gate insulating film on the semiconductor substrate; a first impurity region and a second impurity region formed in a surface of the substrate; an lightly doped region in contact with the first impurity region and formed toward the second impurity region in the semiconductor substrate; and an L-shaped gate electrode on the semiconductor substrate extending between the lightly doped region and the second impurity region.

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patent: 4597827 (1986-07-01), Nishitani et al.
patent: 4971922 (1990-11-01), Watabe et al.
patent: 5202272 (1993-04-01), Hsieh et al.
patent: 5244823 (1993-09-01), Adan
patent: 5391510 (1995-02-01), Hsu et al.
patent: 5459091 (1995-10-01), Hwang

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