Method of manufacturing a BiCMOS semiconductor device

Details Method of manufacturing a BiCMOS semiconductor device Method of manufacturing a BiCMOS semiconductor device

1998-11-02

2000-05-23

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438234, H01L 218238

Patent

active

060665203

ABSTRACT:
A method of making a BiCMOS semiconductor device in which different polysilicon layers are used to form the gate electrodes of the CMOS devices and an emitter leading electrode for the bipolar device. A first polysilicon layer forms the lower portion of the gate electrodes of the CMOS devices, while a second highly doped polysilicon layer forms a center portion of emitter leading electrode of the bipolar device.

REFERENCES:
patent: 5547893 (1996-08-01), Sung
patent: 5970333 (1999-10-01), Girs et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a BiCMOS semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a BiCMOS semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a BiCMOS semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1836371