Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1985-03-22
1987-06-09
Straub, Gary P.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
148183, 148DIG3, 148DIG24, 148DIG45, 148DIG83, 20419231, 2041802, 427 38, 428698, C30B 3122, H01L 2124, C23C 1400
Patent
active
046718451
ABSTRACT:
The present invention relates to the production of a stable insulator of a germanium and a device produced thereby. A germanium substrate is provided with a layer of silicon nitride deposited on one of the outer surfaces. Ionized nitrogen is implanted by an ion beam into the silicon nitride layer. An electric field is applied across the substrate and layer. In one embodiment the substrate and layer are annealed while maintaining the electric field, the electric field is removed, and a second annealing step grows the germanium nitride insulator layer subcutaneously. In another embodiment the subcutaneous germanium nitride insulator layer is grown during a single annealing step by continued application of the electric field to the substrate and the layer.
REFERENCES:
patent: 3226194 (1965-12-01), Kuntz
patent: 3922475 (1975-11-01), Manasevit
patent: 4000020 (1976-12-01), Gaitman
patent: 4105805 (1978-08-01), Glendinning et al.
patent: 4144116 (1979-03-01), Jacob et al.
patent: 4333808 (1982-06-01), Bhattacharyya et al.
patent: 4448633 (1984-05-01), Shuskus
patent: 4510172 (1985-04-01), Ray
patent: 4522886 (1985-06-01), Chin et al.
Yagi et al, Japanese Jl of Applied Physics, vol. 16, No. 2, 2/77, pp. 2451.
Tarvi et al., Jl of Electrochemical Society, 11/63, pp. 1167-1169.
Straub Gary P.
The United States of America as represented by the Secretary of
Walden Kenneth E.
Wein Frederick A.
LandOfFree
Method for producing high quality germanium-germanium nitride in does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing high quality germanium-germanium nitride in, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing high quality germanium-germanium nitride in will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1827127