Method of manufacturing a mask blank including a modified chromi

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Patent

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20419215, C23C 1436

Patent

active

046576487

ABSTRACT:
In a photo-mask blank, a transparent substrate is covered with a shading layer including chromium and chromium carbide. Covered on the shading layer, is an antireflection layer which includes chromium and chromium nitride. The shading and the antireflection layers are deposited in the same hollow space by sputtering. An etch rate of the shading layer is adjustable to that of the antireflection layer to make both etch rates equal and, thereby, to reduce undercuts appearing at the shading layer.

REFERENCES:
patent: 4096026 (1978-06-01), Takeuchi
patent: 4363846 (1982-12-01), Kaneki

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